| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that there is the case that desired transistor characteristics cannot be obtained when hydrogen heat treatment for natural oxide film removal is performed by a conventional method after forming an element isolation insulating film by a shallow trench isolation method. SOLUTION: In the method of manufacturing a semiconductor device, to a silicon substrate, first heat treatment is performed in a reducing atmosphere containing hydrogen on condition that a temperature is within the range of 930°C-1,030°C and the time is longer than 0 second and is equal to or shorter than 30 seconds. After the first heat treatment, while keeping it in the reducing atmosphere containing the hydrogen as it is, the substrate temperature which is lower than the substrate temperature during the first heat treatment and is in the range of 900°C-980°C is maintained for the time longer than 0 second and shorter than 30 seconds and second heat treatment is performed. COPYRIGHT: (C)2011,JPO&INPIT
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