发明名称 SUBSTRATE TREATING DEVICE, AND METHOD OF TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment technique appropriately controlling a pressure in a treatment vessel for setting the pressure to a desired pressure state by controlling a flow of gas in a treatment vessel for treating substrates. SOLUTION: A substrate treating device 1 introduces treatment gas into the treatment vessel 2 and exhausts air for treating a substrate G placed on a mount table 4 in the treatment vessel 2. The substrate treating device 1 includes: a partitioning member 6 for partitioning the periphery of the mount table 4 into a plurality of regions 15 in the treatment vessel 2; a plurality of air outlets 5 that are provided at each of a plurality of regions 15 partitioned by the partitioning member 6 on a bottom face 2a of the treatment vessel 2 and exhaust treatment gas; an exhaust mechanism 55 that is connected to each of the plurality of air outlets 5 for operating individually; a sensor 47 for detecting pressure in each region 15; and a control unit 45 for individually controlling the exhaust mechanism 55, based on pressure detected by the sensor 47. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010272551(A) 申请公布日期 2010.12.02
申请号 JP20090120482 申请日期 2009.05.19
申请人 TOKYO ELECTRON LTD 发明人 SAITO YUKIMASA
分类号 H01L21/205;B01J3/02;C23C16/455;H01L21/304;H01L21/3065 主分类号 H01L21/205
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