发明名称 REDUCING DEVICE PARASITICS IN SWITCHED CIRCUITS
摘要 A system and method are provided to reduce the influence of parasitic capacitance at the drain and source of MOS transistors of a sampling circuit. In one embodiment, the bulk is left floating during a first phase and refreshed during a second phase. During the first phase, the effective parasitic contribution of the drain or source of a MOS transistor is lower due to the series combination of Cj and Cw capacitances. In another embodiment, a large resistance provides a path from a reference voltage to the bulk of a MOS transistor, thereby resulting in an effective parasitic capacitance of the series combination of Cj and Cw. Advantageously, the parasitic capacitance is reduced as well as its non-linear effect, the operating speed is improved, as well as the signal distortion and noise.
申请公布号 US2010301930(A1) 申请公布日期 2010.12.02
申请号 US20090471688 申请日期 2009.05.26
申请人 ALI AHMED MOHAMED ABDELATTY 发明人 ALI AHMED MOHAMED ABDELATTY
分类号 H03H11/24 主分类号 H03H11/24
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