发明名称 |
METHOD FOR MANUFACTURING QUANTUM DOT |
摘要 |
A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
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申请公布号 |
US2010304553(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20080665242 |
申请日期 |
2008.03.31 |
申请人 |
YOKOYAMA SHIN;AMEMIYA YOSHITERU |
发明人 |
YOKOYAMA SHIN;AMEMIYA YOSHITERU |
分类号 |
H01L21/20;H01L33/00;H01L33/06;H01L33/26 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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