| 摘要 |
<p>Provided is a semiconductor substrate equipped with a first semiconductor and a second semiconductor formed over the first semiconductor, the second semiconductor having either an impurity which exhibits P-type conductivity or first-impurity atoms which exhibit N-type conductivity and further having second-impurity atoms which bring the Fermi level of the second semiconductor having the first-impurity atoms near to the Fermi level of the second semiconductor having no first-impurity atoms. In one embodiment, the majority carrier in the second semiconductor is electrons, and the second-impurity atoms lower the Fermi level of the second semiconductor which has the first-impurity atoms. The second semiconductor is a compound semiconductor of 3- and 5-Group elements, and the second-impurity atoms may be atoms of at least one element selected from a group consisting of beryllium, boron, carbon, magnesium, and zinc.</p> |
