发明名称 |
SEMICONDUCTOR DEVICES ON DIFFUSION BARRIER COATED SUBSTRATES AND METHODS OF MAKING THE SAME |
摘要 |
Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.
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申请公布号 |
CA2761748(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
CA20102761748 |
申请日期 |
2010.05.27 |
申请人 |
KOVIO, INC. |
发明人 |
KAMATH, ARVIND;KOCSIS, MICHAEL;MCCARTHY, KEVIN;WONG, GLORIA MAN TING |
分类号 |
H01L49/02;H01L21/02;H01L21/26;H01L21/28;H01L21/336;H01L23/14 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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