| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure that a conductive material which can be utilized as a buried electrode and has a specified pattern configuration is buried in a nitride compound semiconductor material, and to manufacture a device, such as an SIT. SOLUTION: The III-V group compound semiconductor consists of (1) a first III-V group compound semiconductor which is shown by formula: In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (where, x+y+z=1, 0≤x≤1, 0≤y≤1, 0≤z≤1), (2) SiO<SB>2</SB>for covering a part of the surface of the first III-V group compound semiconductor in a specified pattern configuration in contact with this first III-V group compound semiconductor, (3) a conductive material laminated in contact with SiO<SB>2</SB>, and (4) a second III-V group compound semiconductor, which covers both of the exposed part of the surface of the first III-V group compound semiconductor not covered with the laminate of SiO<SB>2</SB>and the conductive material, and the conductive material and is represented by formula: In<SB>u</SB>Ga<SB>v</SB>Al<SB>w</SB>N (where u+v+w=1, 0≤u≤1, 0≤v≤1, 0≤w≤1). The layer thickness of the conductive material is 5 to 100 nm. COPYRIGHT: (C)2011,JPO&INPIT
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