| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable a-SiTFT which forms a channel width long even if the number of banded projection parts to be formed is suppressed, thereby driving fast and suppressing breaking of wire in an electrode, in the a-SiTFT which adopts the combed type electrode to form a zigzag shape channel area. SOLUTION: A source electrode S is formed in a single line shape continuous zigzag while drawing a plurality of rugged parts on a surface of a semiconductor layer a-Si, and a drain electrode D is formed in the combed type, and is composed of: a basic part D<SB>N</SB>non-overlapping the semiconductor layer a-Si; and a plurality of banded projection parts D<SB>T</SB>which are branched from the basic part, and climbs over a side end part of the semiconductor layer a-Si, to be disposed on the surface of the semiconductor layer a-Si, and also are disposed so that the leading edge parts are inserted into recess parts of an electrode of the source electrode S. COPYRIGHT: (C)2011,JPO&INPIT
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