发明名称 |
Nonvolatile memory device and method of operating and fabricating the same |
摘要 |
Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
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申请公布号 |
US2010302870(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20100805498 |
申请日期 |
2010.08.03 |
申请人 |
HONG KI-HA;LEE SUNG-HOON;HYUN JAE-WOONG;SHIN JAI-KWANG;JIN YOUNG-GU;PARK SUNG-II;KIM JONG-SEOB |
发明人 |
HONG KI-HA;LEE SUNG-HOON;HYUN JAE-WOONG;SHIN JAI-KWANG;JIN YOUNG-GU;PARK SUNG-II;KIM JONG-SEOB |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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地址 |
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