| 摘要 |
<p>Disclosed is a sintered body target which is mainly composed of the element (A), the element (B) and the element (C) described below, and characterized by having a heat conductivity of not less than 2.5 W/mK and an oxygen concentration of not less than 5,000 ppm. (A) one or more chalcogenide elements selected from among S, Se and Te (B) one or more group Vb elements selected from among Bi, Sb, As, P and N (C) one or more group IVb or group IIIb elements selected from among Ge, Si, C, Ga and In Since the sputtering target has high heat conductivity and low electrical resistivity, heat accumulation and diffusion of volatile components are improved, thereby enabling stable DC sputtering. In addition, the sintered body target enables stable and high-speed sputtering by applying high electric power thereto.</p> |
