发明名称 PROCESS FOR PRODUCING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a process for producing a resist pattern, by which a pattern having an excellent shape can be formed. <P>SOLUTION: The process for producing a resist pattern includes the following steps (A) to (D): (A) a step of forming the first resist film on a substrate using the first resist composition comprising a resin having an acid-labile group, a photoacid generator, and a crosslinking agent, exposing and developing the first resist film to obtain the first resist pattern; (B) a step of heating the first resist pattern at 190-250&deg;C for 10-60 s; (C) a step of forming the second resist film on the substrate on which the first resist pattern has been formed using the second resist composition, exposing the second resist film; and (D) a step of developing the exposed second resist film to obtain the second resist pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010271707(A) 申请公布日期 2010.12.02
申请号 JP20100096732 申请日期 2010.04.20
申请人 SUMITOMO CHEMICAL CO LTD 发明人 HATA MITSUHIRO;YAMAMOTO SATOSHI;FUJI YUSUKE
分类号 G03F7/40;C08F220/28;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/40
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