| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rotation/revolution type vapor phase growth apparatus which increases the area of a semiconductor thin film that is vapor phases grown at a time without increasing the size of, for example, a susceptor. <P>SOLUTION: The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation and revolution mechanism and includes: a bearing member 13 provided in a circular opening formed on a disc-shaped susceptor 12, a uniformly heated plate 14 mounted on the bearing member so as to be rotatable; an external gear member 15 mounted on the uniformly heated plate; a fixed internal gear member 17 having a ring shape and including an internal gear gearing with the external gear member; a heating means 19 for heating a substrate 18 held on the external gear member from the back surface side of the susceptor; and a flow channel 20 for guiding a material gas to a direction parallel to the substrate surface, wherein the outer diameter of the bearing member or the gear reference circle diameter of the external gear member is set to a smaller dimension than the outer diameter of the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
