| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor growth device in which peeling of wall deposition deposited on the inner wall of a chamber is accelerated. SOLUTION: The vapor growth device 10 includes a chamber 3, a plurality of lamps 41, a blowing means 5 and a pair of first opening/closing doors. In the chamber 3, a susceptor 2 where a wafer 1 is loaded is disposed inside and a raw material gas G is introduced to the inside. The chamber 3 has a first partition 31 covering the upper part of the susceptor 2 and a second partition 32 covering the lower part of the susceptor 2. The plurality of lamps 41 heat the wafer 1 and the susceptor 2 through the first partition 31, and the blowing means 5 blows cooling air (cooling medium) A to the upper surface of the first partition 31. The pair of first opening/closing doors can block the blowing of the cooling air A to an external region 3m opposing an internal region 3n on the downstream side over the susceptor 2, to which the raw material gas G is introduced. COPYRIGHT: (C)2011,JPO&INPIT
|
