| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a three-dimensional structure type capacitor having a larger aspect ratio, and a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device includes: a process of forming an insulating film 34 on a semiconductor substrate 21; a process of forming a first mask extending in a first direction and having a belt-like pattern on the formed insulating film 34; a belt-like body forming process of etching the insulating film 34 using the first mask as a mask to process the insulating film 34 into a belt-like body; a process of forming a second mask extending in a second direction different from the first direction and having a belt-like pattern on the belt-like body; a columnar body forming process of etching the belt-like body using the second mask as a mask to process the belt-like body into a columnar body 34; a process of forming a first conductive film to cover the surface of the columnar body 34; and an electrode forming process of etching the first conductive film to form an electrode 35 made of the first conductive film on the side face of the columnar body 34. COPYRIGHT: (C)2011,JPO&INPIT
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