| 摘要 |
A method of operating a nonvolatile memory device includes performing a reset operation for setting a level of a program voltage to a first level, performing a program operation and a verification operation on memory cells included in a first page of a first memory block while raising the program voltage from the first level, storing a level of the program voltage, supplied to the first page when memory cells programmed to have threshold voltages with at least a verification voltage are detected during the verification operation, as a second level, while raising the program voltage from the second level, performing the program operation and the verification operation on each of second to last pages of the first memory block, and after completing the program operation for the first memory block, performing the reset operation for setting the level of the program voltage to the first level.
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