发明名称 Pre-Charged High-Speed Level Shifters
摘要 An integrated circuit structure includes a latch having a first output node and a second output node complementary to each other. A first pre-charge transistor has a source-drain path coupled between a positive power supply node and the first output node. A second pre-charge transistor has a source-drain path coupled between the positive power supply node and the second output node. The integrated circuit structure further includes a delay-inverter coupled between a signal input node and inputs of a first NMOS transistor and a second NMOS transistor in the latch. The delay-inverter is configured to allow one of the first pre-charge transistor and the second pre-charge transistor to pre-charge a respective one of the first output node and the second output node before an input signal at the signal input node arrives at a gate of a respective one of the first NMOS transistor and the second NMOS transistor.
申请公布号 US2010301900(A1) 申请公布日期 2010.12.02
申请号 US20100750441 申请日期 2010.03.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 DENG KUO-LIANG
分类号 H03K19/0175 主分类号 H03K19/0175
代理机构 代理人
主权项
地址