发明名称 |
Pre-Charged High-Speed Level Shifters |
摘要 |
An integrated circuit structure includes a latch having a first output node and a second output node complementary to each other. A first pre-charge transistor has a source-drain path coupled between a positive power supply node and the first output node. A second pre-charge transistor has a source-drain path coupled between the positive power supply node and the second output node. The integrated circuit structure further includes a delay-inverter coupled between a signal input node and inputs of a first NMOS transistor and a second NMOS transistor in the latch. The delay-inverter is configured to allow one of the first pre-charge transistor and the second pre-charge transistor to pre-charge a respective one of the first output node and the second output node before an input signal at the signal input node arrives at a gate of a respective one of the first NMOS transistor and the second NMOS transistor.
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申请公布号 |
US2010301900(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20100750441 |
申请日期 |
2010.03.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
DENG KUO-LIANG |
分类号 |
H03K19/0175 |
主分类号 |
H03K19/0175 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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