| 摘要 |
Provided are a nitride semiconductor light emitting element, including an n-type nitride semiconductor substrate including a dislocation bundle concentration region, and a nitride semiconductor stacked body having an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer in this order on the n-type nitride semiconductor substrate, the nitride semiconductor light emitting element having a dielectric region in a region of the nitride semiconductor stacked body corresponding to the dislocation bundle concentration region, an electrode for p-type provided to be in contact with a portion of the p-type nitride semiconductor layer and a portion of the dielectric region, and an electrode for n-type provided on a side of the n-type nitride semiconductor substrate opposite to a side on which the nitride semiconductor stacked body is provided, and a manufacturing method thereof.
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