发明名称 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
摘要 In at least one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) includes at least one active layer (3) for generating a primary radiation (P). The semiconductor layer sequence (2) further comprises a plurality of conversion layers (4), wherein the conversion layers (4) are equipped to at least partially absorb and convert the primary radiation (P) into a secondary radiation (S) having a longer wavelength than the primary radiation (P). The semiconductor layer sequence (2) further comprises a roughened region (5) which extends at least in some sections into the conversion layers (4).
申请公布号 WO2010136251(A1) 申请公布日期 2010.12.02
申请号 WO2010EP54662 申请日期 2010.04.08
申请人 OSRAM OPTO SEMICONDUCTORS GMBH;GMEINWIESER, NIKOLAUS;HAHN, BERTHOLD 发明人 GMEINWIESER, NIKOLAUS;HAHN, BERTHOLD
分类号 H01L33/22;H01L33/50 主分类号 H01L33/22
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