发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP |
摘要 |
In at least one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) includes at least one active layer (3) for generating a primary radiation (P). The semiconductor layer sequence (2) further comprises a plurality of conversion layers (4), wherein the conversion layers (4) are equipped to at least partially absorb and convert the primary radiation (P) into a secondary radiation (S) having a longer wavelength than the primary radiation (P). The semiconductor layer sequence (2) further comprises a roughened region (5) which extends at least in some sections into the conversion layers (4). |
申请公布号 |
WO2010136251(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
WO2010EP54662 |
申请日期 |
2010.04.08 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH;GMEINWIESER, NIKOLAUS;HAHN, BERTHOLD |
发明人 |
GMEINWIESER, NIKOLAUS;HAHN, BERTHOLD |
分类号 |
H01L33/22;H01L33/50 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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