发明名称 STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS
摘要 <p>A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.</p>
申请公布号 KR20100126749(A) 申请公布日期 2010.12.02
申请号 KR20107020799 申请日期 2009.02.12
申请人 EASTMAN KODAK COMPANY 发明人 ANDERSON TODD JEFFERY;MCCARTEN JOHN P.;SUMMA JOSEPH R.;TIVARUS CRISTIAN ALEXANDRU;COMPTON JOHN THOMAS
分类号 H04N5/335;H01L27/146;H04N9/07 主分类号 H04N5/335
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