发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
<p>The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.</p> |
申请公布号 |
EP2256817(A2) |
申请公布日期 |
2010.12.01 |
申请号 |
EP20100009810 |
申请日期 |
2000.04.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
SHUNPEI, YAMAZAKI;KOYAMA, JUN;TAKAYAMA, TORU;HAMANTANI, TOSHIJI |
分类号 |
H01L29/786;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|