| 摘要 |
Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy. |
