METHOD OF FORMING A MICROELECTRONIC STRUCTURE COMPRISING DUAL-LAYER LIGHT-SENSITIVE DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS FOR 193-NM LITHOGRAPHY AND LAYER STACK FOR ITS FORMATION

摘要

The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet-developable bottom anti-reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dye-filled and dye-attached compositions for use in the anti-reflective coatings. The anti-reflective coatings are thermally crosslinkable and photochemically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.