发明名称 METHOD FOR FILM FORMATION, APPARATUS FOR FILM FORMATION, AND COMPUTER-READABLE RECORDING MEDIUM
摘要 <p>Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.</p>
申请公布号 KR20100126307(A) 申请公布日期 2010.12.01
申请号 KR20107018300 申请日期 2009.01.23
申请人 TOKYO ELECTRON LIMITED 发明人 HARA MASAMICHI;MIZUSAWA YASUSHI;TAGA SATOSHI;GOMI ATSUSHI;HATANO TATSUO
分类号 H01L21/205;C23C16/16;H01L21/285 主分类号 H01L21/205
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