METHOD FOR FABRICATING OF COMPOUND SEMICONDUCTOR LAYER

摘要

PURPOSE: A method for forming a compound semiconductor layer is provided to reduce the thickness of an element by reducing the density of defects without a buffer layer. CONSTITUTION: An oxide film on the surface of a VI family-based substrate(11) is eliminated. Horizontally grown III-V family-based seed layer is formed on the substrate. The seed layer is heated to temperature at which a grid rearrangement is performed, and the grid of the seed layer is rearranged. The seed layer is thermally treated. A III-V family-based compound semiconductor layer(14), which is composed of the same compound as the seed layer, is formed.