发明名称 |
METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AI,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION |
摘要 |
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure. |
申请公布号 |
EP1977441(A4) |
申请公布日期 |
2010.12.01 |
申请号 |
EP20070716900 |
申请日期 |
2007.01.19 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
SATO, HITOSHI;KAEDING, JOHN, F.;IZA, MICHAEL;BAKER, TROY, J.;HASKELL, BENJAMIN, A.;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI |
分类号 |
H01L21/02;C30B25/20;H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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