METHOD FOR MANUFCTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the increase of gate resistance caused by an insulation layer by preventing an insulation layer from contacting a polymetal interface during a reoxidation process. CONSTITUTION: A gate insulating layer(32) is formed on a substrate(31). A silicon film(33), a barrier metal(34), and a metal layer(35) are successively formed on the gate insulating layer. A first pattern is formed by partially etching the silicon film. The silicon film is partially etched so that an undercut can be formed at the lower part of the metal layer.