发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 <p>A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.</p>
申请公布号 KR20100126571(A) 申请公布日期 2010.12.01
申请号 KR20107024030 申请日期 2009.06.03
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 HIRAYAMA MASAKI;OHMI TADAHIRO
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
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