METHOD FOR OBTAINING FILMS OF SEMICONDUCTOR MATERIALS INCLUDING AN INTERMEDIATE BAND

摘要

This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target.