发明名称 |
Semiconductor device and its fabricating method |
摘要 |
The present invention is characterized by forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal oxide film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the first adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region. |
申请公布号 |
EP2256807(A2) |
申请公布日期 |
2010.12.01 |
申请号 |
EP20100009803 |
申请日期 |
2003.12.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
NISHI, KAZUO;TAKAYAMA, TORU;GOTO, YUUGO |
分类号 |
H01L27/12;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/144;H01L27/146;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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