NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A nitride semiconductor light emitting device is provided to implement the light emitting device of high brightness by increasing the overall light emitting area by forming an N-type electrode pad in circular pattern. CONSTITUTION: A n-type nitride semiconductor layer(120) is formed on a substrate(100). The active layer(130) is formed on a fixed region of the n-type nitride semiconductor layer. The p-type semiconductor layer(140) is formed on the active layer. A transparent electrode(150) is formed on the p-type nitride semiconductor layer.