METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device manufacturing method is provided to prevent the generation of a gap difference between element isolation films by implementing a dry etching process. CONSTITUTION: A gate insulating layer, a first conductive film, and a device isolation mask pattern are successively formed on a semiconductor substrate(200). The first conductive film and the gate insulating layer are patterned according to the device isolation mask pattern to form a first conductive pattern(204a) and a gate insulation pattern(202a).