发明名称 MOLD RELEASE FILM FOR SEMICONDUCTOR RESIN MOLD
摘要 <p>To provide a release film which has an extremely low gas permeability, an enormously small mold contamination by a mold resin and a high releasability. A gas barrier release film for semiconductor resin molds, comprising a release layer (I) having excellent releasability, a plastic support layer (II) supporting the release layer, and a gas restraint layer (III) made of a metal or a metal oxide, formed between the release layer and the support layer, and having a xylene gas permeability of at most 10 -15 (kmol m/(s·m 2 ·kPa)) at 170°C. The release layer (I) is preferably formed from a fluororesin such as an ethylene/tetrafluoroethylene copolymer, and a metal oxide layer is preferably a layer of an oxide such as an aluminum oxide, a silicon oxide or a magnesium oxide.</p>
申请公布号 EP2012351(A4) 申请公布日期 2010.12.01
申请号 EP20070742083 申请日期 2007.04.20
申请人 ASAHI GLASS COMPANY, LIMITED 发明人 OKUYA, TAMAO;ARUGA, HIROSHI;HIGUCHI, YOSHIAKI
分类号 H01L21/56;B29C33/68 主分类号 H01L21/56
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