| 摘要 |
A micro electro mechanical device includes: a semiconductor layer (1); a source/drain region (13) formed on both sides of a channel region within the semiconductor layer (1); a gate insulating film (15) (19) formed on the semiconductor layer (1); a cavity (15a) formed on the gate insulating film (15) (19); and a gate electrode (17) formed on the cavity (15a), the gate electrode (17) being movable so as to contact with the gate insulating film (15) (19). In the device, a pressure applied on the gate electrode (17) is detected by a contact area (TA1; TA2) of the gate electrode (17) and the gate insulating film (15) (19). |
