| 摘要 |
<p>This invention provides a diruthenium complex such as tetra (µ-formate) diruthenium (II, II) or tetra (µ-formate) (dihydrate) diruthenium (II, II), a material for chemical vapor deposition, comprising the complex, and a method for forming a ruthenium film by chemical vapor deposition using the material.</p> |
