| 摘要 |
A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.
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