| 摘要 |
A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
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