发明名称 |
Method for low-temperature sealing of a cavity under vacuum or under controlled atmosphere |
摘要 |
This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.
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申请公布号 |
US7842556(B2) |
申请公布日期 |
2010.11.30 |
申请号 |
US20080171530 |
申请日期 |
2008.07.11 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ANDRE BERNARD;ARNAUD AGNES |
分类号 |
H01L21/50;H01L21/48;H01L21/56 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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