发明名称 Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
摘要 A field transistor is divided into a number of cells (6) and includes a separate first gate line (20) connected to first transistor cells (8) and a separate second gate line (22) connected to second transistor cells (10). A drive circuit is used to drive all the cells (6) in a normal, saturated operations state but to drive only the second cells (10) in a linear operations state to reduce the number of cells used in the linear operations state.
申请公布号 US7843259(B2) 申请公布日期 2010.11.30
申请号 US20050658224 申请日期 2005.07.18
申请人 NXP B.V. 发明人 CUTTER JOHN R.
分类号 H01L25/00;H01L27/02;H01L29/423;H01L29/78 主分类号 H01L25/00
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