发明名称 |
Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof |
摘要 |
A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.
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申请公布号 |
US7842520(B2) |
申请公布日期 |
2010.11.30 |
申请号 |
US20060615724 |
申请日期 |
2006.12.22 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MARUYAMA HOTAKA;MITSUBORI MASUMI;KATO KAORU |
分类号 |
H01L21/66;H01L21/4763 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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