| 摘要 |
A thin film transistor array panel includes a substrate, a data line and a gate electrode formed on the substrate, a insulating layer formed on the data line and the gate electrode, a semiconductor layer formed on the insulating layer, a drain electrode and a source electrode formed on the semiconductor layer, a passivation layer formed on the drain electrode and the source electrode including a first contact hole to expose a portion of the data line, a second contact hole to expose a portion of the source electrode, a third contact hole to expose a portion of the drain electrode, and a fourth contact hole to expose a portion of gate electrode, a first connector formed on the passivation layer and connected to the data line and the source electrode through the first contact hole and the second contact hole, a gate line formed on the passivation layer and connected to the gate electrode through the fourth contact hole, and a pixel electrode connected to the drain electrode through the third contact hole. |
