发明名称 Refresh circuit and refresh method in semiconductor memory device
摘要 A refresh method for a semiconductor memory device having more than one bank group is provided. The refresh method may include applying an all-refresh command to one the bank groups, determining if one of the bank groups includes a bank undergoing a refresh operation when the all-refresh command is received, and performing an all-refresh operation based on the determination.
申请公布号 US7844773(B2) 申请公布日期 2010.11.30
申请号 US20070730275 申请日期 2007.03.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SUNWOO JUNG;LEE YUN-SANG;CHUNG HOE-JU
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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