发明名称 Active matrix array structure
摘要 An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.
申请公布号 US7842954(B2) 申请公布日期 2010.11.30
申请号 US20100775493 申请日期 2010.05.07
申请人 AU OPTRONICS CORPORATION 发明人 YU WEI-SHENG;FANG KUO-LUNG;LIN HSIANG-LIN;TSENG HSIEN-CHIEH;LIN HAN-TU
分类号 H01L33/00 主分类号 H01L33/00
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