发明名称 Methods of operating multi-bit flash memory devices and related systems
摘要 Methods of operating a non-volatile multi-bit memory device can include programming multi-bit memory cells included in one page of the device with page data including an error detection code based on the page data and determining the validity of the page data using the error detection code read from the multi-bit memory cells in response to an error during programming of the multi-bit memory cells, wherein the multi-bit memory cells in the one page are configured to store a single bit of the page data.
申请公布号 US7843732(B2) 申请公布日期 2010.11.30
申请号 US20080201476 申请日期 2008.08.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SU-RYUN;YOON SONG-HO
分类号 G11C16/00;G11C16/04;G11C16/06 主分类号 G11C16/00
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