发明名称 Charged particle beam exposure method and charged particle beam exposure device
摘要 When a space, sandwiched by large patterns having a predetermined size or more, is exposed using a charged particle beam, the space sandwiched by the large patterns is exposed using a common block mask having the space and edge portions of the large patterns on both sides of the space, and portions other than the edge portions of the large patterns on both sides are exposed by a variable rectangular beam or by using another block mask.
申请公布号 US7844941(B2) 申请公布日期 2010.11.30
申请号 US20090508642 申请日期 2009.07.24
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 TAKAHASHI YASUSHI
分类号 G06F17/50;G21K5/10;H01J37/08;H01L21/027 主分类号 G06F17/50
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