发明名称 |
Terminal structures of an ion implanter having insulated conductors with dielectric fins |
摘要 |
Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.
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申请公布号 |
US7842934(B2) |
申请公布日期 |
2010.11.30 |
申请号 |
US20070845441 |
申请日期 |
2007.08.27 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
TEKLETSADIK KASEGN D.;HERMANSON ERIC;MAY DOUG;KRAUSE STEVE;LOW RUSSELL JOHN |
分类号 |
G21K5/00 |
主分类号 |
G21K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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