Magnetic shift register and data accessing method

摘要

A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.