| 摘要 |
A pattern 121 provided on a transparent substrate 100 as a mask pattern includes partial patterns 121A and 121B. Each of the partial patterns 121A and 121B has a mask enhancer structure including a phase shifter 102 for transmitting exposing light in an opposite phase with respect to a transparent portion and a shielding portion 101 surrounding the phase shifter 102. The partial pattern 121A is close to other patterns 122 and 123 at distances not larger than a given distance with the transparent portion sandwiched therebetween. The width of the phase shifter 102A of the partial pattern 121A is smaller than the width of the phase shifter 102B of the partial pattern 121B. |
