摘要 |
PURPOSE: A non-volatile semiconductor memory circuit is provided to improve the resistance distribution between a set data and a reset data by controlling the amount of current according to a data set state and data reset state. CONSTITUTION: A nonvolatile semiconductor memory circuit comprises a memory cell array and a read / write circuit block(200). The read/ write circuit block controls current driving performance to be different according to an operation mode. The read/write circuit block includes a read circuit(210) and a write verification circuit(250). The read circuit reads out data from selected memory cell. A write verification circuit writes data into a memory cell array.
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