发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY CIRCUIT
摘要 PURPOSE: A non-volatile semiconductor memory circuit is provided to improve the resistance distribution between a set data and a reset data by controlling the amount of current according to a data set state and data reset state. CONSTITUTION: A nonvolatile semiconductor memory circuit comprises a memory cell array and a read / write circuit block(200). The read/ write circuit block controls current driving performance to be different according to an operation mode. The read/write circuit block includes a read circuit(210) and a write verification circuit(250). The read circuit reads out data from selected memory cell. A write verification circuit writes data into a memory cell array.
申请公布号 KR20100124895(A) 申请公布日期 2010.11.30
申请号 KR20090043829 申请日期 2009.05.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, HYUCK SOO
分类号 G11C13/02 主分类号 G11C13/02
代理机构 代理人
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