摘要 |
A method for driving a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device includes a semiconductor layer having a channel, a first insulating film provided on the channel, a floating electrode provided on the first insulating film, a second insulating film provided on the floating electrode, and a gate electrode provided on the second insulating film, and changes its data memory state by injection of charges into the floating electrode. The method includes to achieve a state in which charges having a first polarity are injected into the floating electrode: providing a first potential difference between the semiconductor layer and the gate electrode to inject charges having the first polarity into the second insulating film; subsequently providing a second potential difference between the semiconductor layer and the gate electrode to inject charges having a second polarity opposite to the first polarity into the second insulating film; and subsequently providing a third potential difference between the semiconductor layer and the gate electrode to inject charges having the first polarity into the floating electrode.
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