发明名称 Semiconductor device having MOS transistors which are serially connected via contacts and conduction layer
摘要 A semiconductor device includes a plurality of signal lines which are arranged at a predetermined pitch; first and second MOS transistors which are connected to the signal lines, and also serially connected to each other; and a connection device which functions as a connection node between the serially-connected first and second MOS transistors, and connects a source area of one of the first and second MOS transistors to a drain area of the other of the first and second MOS transistors via contact holes, which are formed through an insulating layer, and a conduction layer connected to the contact holes.
申请公布号 US7842976(B2) 申请公布日期 2010.11.30
申请号 US20080259527 申请日期 2008.10.28
申请人 ELPIDA MEMORY, INC. 发明人 FUJII ISAMU;MIYATAKE SHINICHI;WATANABE YUKO;SATO HOMARE
分类号 H01L27/10;H01L29/73;H01L29/74 主分类号 H01L27/10
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